Fabrication of SiC nanowire thin-film transistors using dielectrophoresis

被引：0

作者：

戴振清 ^{[1
,2
]}

张丽英 ^{[1
]}

陈长鑫 ^{[1
]}

钱炳建 ^{[1
]}

徐东 ^{[1
]}

陈海燕 ^{[1
]}

魏良明 ^{[1
]}

张亚非 ^{[1
]}

机构：

[1] Key Laboratory for Thin Film and Microfabrication of the Ministry of Education,Research Institute of Micro and Nano Science and Technology,Shanghai Jiao Tong University

[2] Department of Physics and Chemistry,Hebei Normal University of Science and Technology

来源：

Journal of Semiconductors | 2012年 / 11期

基金：

中国国家自然科学基金;

关键词：

dielectrophoresis; SiC nanowires; thin-film transistors;

D O I：

暂无

中图分类号：

TN321.5 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The selection of solvents for SiC nanowires（NWs） in a dielectrophoretic process is discussed theoretically and experimentally.From the viewpoints of dielectrophoresis force and torque,volatility,as well as toxicity, isopropanol（IPA） is considered as a proper candidate.By using the dielectrophoretic process,SiC NWs are aligned and NW thin films are prepared.The densities of the aligned SiC NWs are 2μm;,4μm;,6μm;,which corresponds to SiC NW concentrations of 0.1μg/μL,0.3μg/μL and 0.5μg/μL,respectively.Thin-film transistors are fabricated based on the aligned SiC NWs of 6μm;.The mobility of a typical device is estimated to be 13.4cm;/（V·s）.

引用

页码：37 / 42

页数：6

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