Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties

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作者：
LI Lin-na1
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来源：
Optoelectronics Letters | 2007年 / 06期
关键词：
In; ITO; Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties; Hall;
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O484.1 [薄膜的生长、结构和外延];
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摘要：
The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evapora- tion of In-Sn alloy with an oxygen pressure of 1.3 ×10-1 Pa and a deposition rate of 10-2 nm/s. The best ITO films obtained have an electrical resistivity of 4.35 × 10-4 ??cm , a carrier concentration of 4.02 × 1020 cm-3 , and a Hall mobility of 67.5 cm2v-1s-1. The influence of the substrate-temperature on the structural , optical and electrical properties of the obtained films has been investigated.
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页码：438 / 440
页数：3
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