High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film

被引：3
|
作者：
支钰崧 [1 ]
江为宇 [1 ]
刘增 [1 ,2 ]
刘媛媛 [3 ,4 ]
褚旭龙 [1 ,5 ]
刘佳航 [1 ]
李山 [1 ]
晏祖勇 [1 ]
王月晖 [1 ]
李培刚 [1 ]
吴真平 [1 ]
唐为华 [1 ,2 ]
机构：
[1] Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications
[2] College of Electronic and Optical Engineering & College of Microelectronics, Nanjing University of Posts and Telecommunications
[3] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
[4] The Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors,Chinese Academy of Sciences
[5] China Aerospace System Simulation Technology Co., Ltd.(Beijing)
来源：
ChinesePhysicsB | 2021年 / 30卷 / 05期
基金：
中国国家自然科学基金; 中央高校基本科研业务费专项资金资助;
关键词：
D O I：
暂无
中图分类号：
TQ133.51 []; TB383.2 []; TN23 [紫外技术及仪器];
学科分类号：
摘要：
Si-doped β-Ga2O3films are fabricated through metal-organic chemical vapor deposition(MOCVD). Solar-blind ultraviolet(UV) photodetector(PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 m A under 200 μW·cm-2254 nm illumination and ±20 V bias, leading to photo-responsivity as high as 788 A·W-1. The Si-doped β-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.
引用
收藏
页码：594 / 600
页数：7
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