Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

被引：0
|
作者：
Jianbai Xia [1 ]
机构：
[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2021年 / 42卷 / 06期
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中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Al-rich nitride, as one of the most important ultra-wide band-gap (UWBG) semiconductors, currently plays the key role of deep ultraviolet (DUV) optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s. However,
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页码：15 / 16
页数：2
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