Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

被引：0
|
作者：
Jianbai Xia [1 ]
机构：
[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2021年 / 42卷 / 06期
关键词：
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Al-rich nitride, as one of the most important ultra-wide band-gap (UWBG) semiconductors, currently plays the key role of deep ultraviolet (DUV) optoelectronics and potentially possesses the advantages of the huge global investment in the manufacturing infrastructure associated with In Ga N material that has become the second most important semiconductor material after Si in the late 2010s. However,
引用
收藏
页码：15 / 16
页数：2
相关论文
共 50 条
  • [21] P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide
    Kroger, Michael
    Hamwi, Sami
    Meyer, Jens
    Riedl, Thomas
    Kowalsky, Wolfgang
    Kahn, Antoine
    ORGANIC ELECTRONICS, 2009, 10 (05) : 932 - 938
  • [22] Heart shaped reconfigurable band-notched ultra-wide band antenna using electromagnetic band-gap structure and varactor diodes
    Ahmed S. Elkorany
    Hesham A. Mohamed
    Zeinab F. Elsharkawy
    Demyana A. Saleeb
    Analog Integrated Circuits and Signal Processing, 2020, 105 : 385 - 393
  • [23] Heart shaped reconfigurable band-notched ultra-wide band antenna using electromagnetic band-gap structure and varactor diodes
    Elkorany, Ahmed S.
    Mohamed, Hesham A.
    Elsharkawy, Zeinab F.
    Saleeb, Demyana A.
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2020, 105 (03) : 385 - 393
  • [24] Development of a P-type doping technique using the chloride VPE method
    Saegusa, Akihiko
    Matsubara, Hideki
    Tanabe, Tatsuya
    Takagishi, Shigenori
    Matsumoto, Kazuhisa
    Sumitomo Electric Technical Review, 1994, (38):
  • [25] Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys
    Tuomisto, Filip
    JOURNAL OF MATERIALS RESEARCH, 2024, 39 (17) : 2369 - 2378
  • [26] Possible efficient p-type doping of AlN using Be:: An ab initio study
    Wu, R. Q.
    Shen, L.
    Yang, M.
    Sha, Z. D.
    Cai, Y. Q.
    Feng, Y. P.
    Huang, Z. G.
    Wu, Q. Y.
    APPLIED PHYSICS LETTERS, 2007, 91 (15)
  • [27] Effects of (P, N) dual acceptor doping on band gap and p-type conduction behavior of ZnO films
    Sui, Yingrui
    Yao, Bin
    Xiao, Li
    Xing, Guozhong
    Yang, Lili
    Li, Xuefei
    Li, Xiuyan
    Lang, Jihui
    Lv, Shiquan
    Cao, Jian
    Gao, Ming
    Yang, Jinghai
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
  • [28] Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing
    Yang, Ji-Hui
    Yin, Wan-Jian
    Park, Ji-Sang
    Burst, James
    Metzger, Wyatt K.
    Gessert, Tim
    Barnes, Teresa
    Wei, Su-Huai
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (02)
  • [29] Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN, p-type AlN and n-type diamond: prediction versus experiment
    Katayama-Yoshida, H
    Nishimatsu, T
    Yamamoto, T
    Orita, N
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (40) : 8901 - 8914
  • [30] Low-Resistivity p-Type Doping in Wurtzite ZnS Using Codoping Method
    Li, Deng-Feng
    Luo, Min
    Li, Bo-Lin
    Wu, Cheng-Bing
    Deng, Bo
    Dong, Hui-Ning
    ADVANCES IN CONDENSED MATTER PHYSICS, 2013, 2013
12345