Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

被引：0

作者：

范晓望 ^{[1
,2
,3
]}

刘建平 ^{[2
,3
]}

张峰 ^{[2
,3
]}

池田昌夫 ^{[2
,3
]}

李德尧 ^{[2
,3
]}

张书明 ^{[2
,3
]}

张立群 ^{[2
,3
]}

田爱琴 ^{[2
,3
]}

温鹏雁 ^{[2
,3
]}

马国宏 ^{[1
]}

杨辉 ^{[2
,3
]}

机构：

[1] Department of Physics,Shanghai University

[2] Suzhou Institute of Nano-tech and Nano-bionics,University of Chinese Academy of Sciences

[3] Key Laboratory of Nanodevice and Applications,Chinese Academy of Sciences

来源：

Chinese Physics Letters | 2017年 / 09期

基金：

中国国家自然科学基金;

关键词：

InGaN; LD; Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current;

D O I：

暂无

中图分类号：

TN31 [半导体二极管];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Electroluminescence（EL） and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes（LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm;are similar, while LD with threshold current density of 4 kA/cm;exhibits a smaller augerlike recombination rate compared with the one of 6 kA/cm;. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.

引用

页码：115 / 117

页数：3

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