Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current

被引：0
|
作者：
范晓望 [1 ,2 ,3 ]
刘建平 [2 ,3 ]
张峰 [2 ,3 ]
池田昌夫 [2 ,3 ]
李德尧 [2 ,3 ]
张书明 [2 ,3 ]
张立群 [2 ,3 ]
田爱琴 [2 ,3 ]
温鹏雁 [2 ,3 ]
马国宏 [1 ]
杨辉 [2 ,3 ]
机构：
[1] Department of Physics,Shanghai University
[2] Suzhou Institute of Nano-tech and Nano-bionics,University of Chinese Academy of Sciences
[3] Key Laboratory of Nanodevice and Applications,Chinese Academy of Sciences
来源：
Chinese Physics Letters | 2017年 / 09期
基金：
中国国家自然科学基金;
关键词：
InGaN; LD; Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current;
D O I：
暂无
中图分类号：
TN31 [半导体二极管];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Electroluminescence（EL） and temperature-dependent photoluminescence measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes（LDs） before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6 kA/cm;are similar, while LD with threshold current density of 4 kA/cm;exhibits a smaller augerlike recombination rate compared with the one of 6 kA/cm;. The internal quantum efficiency droop is more serious for LD with higher threshold current density. The internal quantum efficiency value estimated from temperature-dependent photoluminescence is consistent with EL measurements.
引用
收藏
页码：115 / 117
页数：3
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