Influence of charge carrier injection at emitter electrode/emitter interface on the performance of metal-base organic transistors

被引：0

作者：

赵恺 ^{[1
]}

邓家春 ^{[1
]}

程晓曼 ^{[1
]}

吴晓明 ^{[1
]}

杨利营 ^{[1
]}

华玉林 ^{[1
]}

魏军 ^{[1
,2
]}

印寿根 ^{[1
]}

机构：

[1] Key Laboratory of Display Materials and Photoelectric Devices of Education Ministry of China,Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology

[2] Singapore Institute of Manufacturing Technology

来源：

OptoelectronicsLetters | 2010年 / 6卷 / 03期

基金：

中国国家自然科学基金;

关键词：

base; NPB;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Pentacene-based metal-base organic transistors(MBOTs) are fabricated.The influence of the charge carrier injection efficiency at the emitter electrode/emitter interface on the device performance is investigated.It is found that the current modulation and the on/off ratio increase with the injection efficiency.By inserting poly(3,4-ethylenedioxythiophene)(PEDOT):PSS/m-MTDATA layers at the emitter electrode/emitter interface,the current modulation and the on/off ratio reach 6.7 mAcm-2 and 23,respectively.Meanwhile,the current gain is 95-96 in our experiment,which is almost independent on the injection efficiency.

引用

页码：195 / 198

页数：4

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