High Current Amplification in p-Type Metal-Base Organic Transistors Using Pentacene Films

被引：12
|
作者：
Nakayama, Ken-ichi [1 ]
Akiba, Ryotaro [1 ]
Kido, Junji [1 ]
机构：
[1] Yamagata Univ, Dept Organ Device Engn, Yonezawa, Yamagata 9928510, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 09期
基金：
日本学术振兴会; 日本科学技术振兴机构;
关键词：
CHARGE-LIMITED TRANSISTOR; HIGH-PERFORMANCE; DISPLAY;
D O I：
10.1143/APEX.5.094202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high current amplification factor and a high output current density in p-type operation were achieved in vertical-type metal-base organic transistors (MBOTs) with a simple layered-device structure using a common material of pentacene. Key fabrication steps enabling stable and reproducible current amplification included heat treatment following the base electrode deposition and an optimized collector layer thickness. In addition, LiF layers above and below the base electrode enhanced the device performance so as to achieve a large current modulation of 24.9mAcm(-2) and a current amplification factor of 567 at a collector voltage V-C = -10 V and base voltage V-B = -3 V. (C) 2012 The Japan Society of Applied Physics
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页数：3
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