Aging mechanism of GaN-based yellow LEDs with V-pits

被引：0

作者：

张天然 ^{[1
]}

方芳 ^{[1
]}

王小兰 ^{[1
]}

张建立 ^{[1
]}

吴小明 ^{[1
]}

潘栓 ^{[1
]}

刘军林 ^{[1
]}

江风益 ^{[1
]}

机构：

[1] National Institute of LED on Silicon Substrate, Nanchang University

来源：

Chinese Physics B | 2019年 / 06期

关键词：

GaN-based; yellow LED; aging mechanisms; V-pits;

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

GaN-based yellow light-emitting diodes（LEDs） on Si substrates are aged at a direct current density of 50 A/cm;for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm;. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.

引用

页码：384 / 388

页数：5

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