Aging mechanism of GaN-based yellow LEDs with V-pits

被引：0
|
作者：
张天然 [1 ]
方芳 [1 ]
王小兰 [1 ]
张建立 [1 ]
吴小明 [1 ]
潘栓 [1 ]
刘军林 [1 ]
江风益 [1 ]
机构：
[1] National Institute of LED on Silicon Substrate, Nanchang University
来源：
Chinese Physics B | 2019年 / 06期
关键词：
GaN-based; yellow LED; aging mechanisms; V-pits;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
GaN-based yellow light-emitting diodes（LEDs） on Si substrates are aged at a direct current density of 50 A/cm;for500 h. After the aging process, it can be found that the LEDs have a stable electrical property but their light output power is decayed by 4.01% at 35 A/cm;. Additionally, the aging mechanism of GaN-based yellow LED is analyzed. It is found that the decay of light output power may be attributed to the following two reasons: one is the increase of Shockley–Rrad–Hall recombination and the other is the change of the transport path of holes via V-pits after aging, which may induce the radiative recombination current to decrease. In this paper, not only the aging mechanism of GaN-based yellow LED is investigated, but also a new possible research direction in LED aging is given.
引用
收藏
页码：384 / 388
页数：5
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