Morphology features of β-Ga 2 O 3 bulk crystals by EFG and CZ methods: A review

被引:0
|
作者
Xu, Mujie [1 ]
Wang, Zining [2 ]
Wang, Rui [1 ]
Yu, Zhihong [1 ]
Sun, Zhenhao [1 ]
Fu, Bo [1 ,2 ]
Shi, Yujun [3 ]
机构
[1] Qingdao Univ Sci & Technol, Dept Informat Sci & Technol, 99 Songling Rd, Qingdao 266061, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[3] Univ Calgary, Dept Chem, Calgary, AB T2N 1N4, Canada
基金
中国国家自然科学基金;
关键词
Morphology feature; Growth technology; Seed crystal; Pulling and rotation rates; BETA-GA2O3; SINGLE-CRYSTALS; GALLIUM OXIDE; GROWTH;
D O I
10.1016/j.pcrysgrow.2024.100658
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-quality crystals commonly exhibit regular morphology features and symmetries related to their crystal structures. The recognition of morphology features, especially on the shoulder morphology, will provide crucial guidance for the crystal growth and quality control. Here, the morphology features of /3-Ga2O3 bulk crystals were discussed from three aspects of growth technology, orientation of seed crystal as well as pulling and rotation rates. Combined with the theoretical morphology of /3-Ga2O3 crystal, the morphology features of /3-Ga2O3 bulk crystals under different growth conditions were illuminated and summarized. The hexagonal seed crystal was also demonstrated, and more suitable for the growth of /3-Ga2O3 bulk crystals with different principle surfaces by EFG method. The first review in the morphology features will become an important reference for future research on the growth of /3-Ga2O3 bulk crystals.
引用
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页数:8
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