Morphology features of β-Ga 2 O 3 bulk crystals by EFG and CZ methods: A review

被引:0
|
作者
Xu, Mujie [1 ]
Wang, Zining [2 ]
Wang, Rui [1 ]
Yu, Zhihong [1 ]
Sun, Zhenhao [1 ]
Fu, Bo [1 ,2 ]
Shi, Yujun [3 ]
机构
[1] Qingdao Univ Sci & Technol, Dept Informat Sci & Technol, 99 Songling Rd, Qingdao 266061, Peoples R China
[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[3] Univ Calgary, Dept Chem, Calgary, AB T2N 1N4, Canada
基金
中国国家自然科学基金;
关键词
Morphology feature; Growth technology; Seed crystal; Pulling and rotation rates; BETA-GA2O3; SINGLE-CRYSTALS; GALLIUM OXIDE; GROWTH;
D O I
10.1016/j.pcrysgrow.2024.100658
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-quality crystals commonly exhibit regular morphology features and symmetries related to their crystal structures. The recognition of morphology features, especially on the shoulder morphology, will provide crucial guidance for the crystal growth and quality control. Here, the morphology features of /3-Ga2O3 bulk crystals were discussed from three aspects of growth technology, orientation of seed crystal as well as pulling and rotation rates. Combined with the theoretical morphology of /3-Ga2O3 crystal, the morphology features of /3-Ga2O3 bulk crystals under different growth conditions were illuminated and summarized. The hexagonal seed crystal was also demonstrated, and more suitable for the growth of /3-Ga2O3 bulk crystals with different principle surfaces by EFG method. The first review in the morphology features will become an important reference for future research on the growth of /3-Ga2O3 bulk crystals.
引用
收藏
页数:8
相关论文
共 50 条
  • [1] Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFG
    Butenko, P. N.
    Boiko, M. E.
    Chikiryaka, A., V
    Guzilova, L., I
    Pozdnyakov, A. O.
    Sharkov, M. D.
    Almaev, A., V
    Nikolaev, V., I
    MATERIALS PHYSICS AND MECHANICS, 2023, 51 (06): : 153 - 162
  • [2] The [010] tilt low angle grain boundaries in bulk β-Ga2O3 crystals grown by EFG method
    Wang, Pei
    Li, Chenglong
    Dong, Yue
    Li, Yang
    Jia, Zhitai
    Tao, Xutang
    Mu, Wenxiang
    SURFACES AND INTERFACES, 2025, 59
  • [3] 2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale Quality
    Feng, Ganrong
    Li, Shan
    Tian, Yawen
    Qi, Song
    Guo, Daoyou
    Tang, Weihua
    ACS OMEGA, 2024, 9 (20): : 22084 - 22089
  • [4] Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystals
    Haven, Drew
    Moutinho, Helio
    Mangum, John S.
    Guthrey, Harvey
    Joyce, David
    Zakutayev, Andriy
    Haegel, Nancy M.
    AIP ADVANCES, 2023, 13 (07)
  • [5] Investigation of the blue color center in β-Ga2O3 crystals by the EFG method
    Fu, Bo
    Mu, Wenxiang
    Li, Yang
    Shi, Yujun
    Li, Yanbin
    Jia, Zhitai
    Tao, Xutang
    CRYSTENGCOMM, 2021, 23 (47) : 8360 - 8366
  • [6] Growth and fundamentals of bulk β-Ga2O3 single crystals
    Mohamed, H. F.
    Xia, Changtai
    Sai, Qinglin
    Cui, Huiyuan
    Pan, Mingyan
    Qi, Hongji
    JOURNAL OF SEMICONDUCTORS, 2019, 40 (01)
  • [7] Wet etching in β-Ga2O3 bulk single crystals
    Jin, Zhu
    Liu, Yingying
    Xia, Ning
    Guo, Xiangwei
    Hong, Zijian
    Zhang, Hui
    Yang, Deren
    CRYSTENGCOMM, 2022, 24 (06) : 1127 - 1144
  • [8] Growth and fundamentals of bulk β-Ga2O3 single crystals
    H.F.Mohamed
    Changtai Xia
    Qinglin Sai
    Huiyuan Cui
    Mingyan Pan
    Hongji Qi
    Journal of Semiconductors, 2019, (01) : 13 - 21
  • [9] Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG method
    Je, Tae-Wan
    Park, Su-Bin
    Jang, Hui-Yeon
    Choi, Su-Min
    Park, Mi-Seon
    Jang, Yeon-Suk
    Lee, Won-Jae
    Moon, Yun-Gon
    Kang, Jin-Ki
    Shin, Yun-Ji
    Bae, Si -Yong
    JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2023, 33 (02): : 83 - 90
  • [10] Structural characterization of defects in EFG- and HYPE-grown β-Ga2O3 crystals
    Ueda, Osamu
    Kasu, Makoto
    Yamaguchi, Hirotaka
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (05)