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- [1] Tribological characteristics of bulk ((2)over-bar01) β-Ga2O3 substrate crystals grown by EFGMATERIALS PHYSICS AND MECHANICS, 2023, 51 (06): : 153 - 162Butenko, P. N.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaBoiko, M. E.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaChikiryaka, A., V论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaGuzilova, L., I论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaPozdnyakov, A. O.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaSharkov, M. D.论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, RussiaAlmaev, A., V论文数: 0 引用数: 0 h-index: 0机构: Tomsk State Univ, Tomsk, Russia Ioffe Inst, St Petersburg, RussiaNikolaev, V., I论文数: 0 引用数: 0 h-index: 0机构: Ioffe Inst, St Petersburg, Russia Ioffe Inst, St Petersburg, Russia
- [2] The [010] tilt low angle grain boundaries in bulk β-Ga2O3 crystals grown by EFG methodSURFACES AND INTERFACES, 2025, 59Wang, Pei论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaLi, Chenglong论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaDong, Yue论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaLi, Yang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaJia, Zhitai论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaTao, Xutang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaMu, Wenxiang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Inst Novel Semicond, Inst Crystal Mat, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
- [3] 2 in. Bulk β-Ga2O3 Single Crystals Grown by EFG Method with High Wafer-Scale QualityACS OMEGA, 2024, 9 (20): : 22084 - 22089Feng, Ganrong论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropac, Nanjing 210023, Peoples R China Beijing GAO Semicond Co Ltd, Beijing 101407, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R ChinaLi, Shan论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropac, Nanjing 210023, Peoples R China Beijing GAO Semicond Co Ltd, Beijing 101407, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R ChinaTian, Yawen论文数: 0 引用数: 0 h-index: 0机构: Beijing GAO Semicond Co Ltd, Beijing 101407, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R ChinaQi, Song论文数: 0 引用数: 0 h-index: 0机构: Beijing GAO Semicond Co Ltd, Beijing 101407, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R ChinaGuo, Daoyou论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Peoples R China Zhejiang Sci Tech Univ, Dept Phys, Key Lab Opt Field Manipulat Zhejiang Prov, Hangzhou 310018, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R ChinaTang, Weihua论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China Nanjing Univ Posts & Telecommun, Natl & Local Joint Engn Lab RF Integrat & Micropac, Nanjing 210023, Peoples R China Beijing GAO Semicond Co Ltd, Beijing 101407, Peoples R China Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China
- [4] Multimodal microscopy of extended defects in β-Ga2O3 (010) EFG crystalsAIP ADVANCES, 2023, 13 (07)Haven, Drew论文数: 0 引用数: 0 h-index: 0机构: Luxium Solut LLC, Milford, NH 03055 USA Luxium Solut LLC, Milford, NH 03055 USAMoutinho, Helio论文数: 0 引用数: 0 h-index: 0机构: Natl Renewable Energy Lab, Golden, CO 80401 USA Luxium Solut LLC, Milford, NH 03055 USAMangum, John S.论文数: 0 引用数: 0 h-index: 0机构: Natl Renewable Energy Lab, Golden, CO 80401 USA Luxium Solut LLC, Milford, NH 03055 USAGuthrey, Harvey论文数: 0 引用数: 0 h-index: 0机构: Natl Renewable Energy Lab, Golden, CO 80401 USA Luxium Solut LLC, Milford, NH 03055 USAJoyce, David论文数: 0 引用数: 0 h-index: 0机构: Luxium Solut LLC, Milford, NH 03055 USA Luxium Solut LLC, Milford, NH 03055 USAZakutayev, Andriy论文数: 0 引用数: 0 h-index: 0机构: Natl Renewable Energy Lab, Golden, CO 80401 USA Luxium Solut LLC, Milford, NH 03055 USAHaegel, Nancy M.论文数: 0 引用数: 0 h-index: 0机构: Natl Renewable Energy Lab, Golden, CO 80401 USA Luxium Solut LLC, Milford, NH 03055 USA
- [5] Investigation of the blue color center in β-Ga2O3 crystals by the EFG methodCRYSTENGCOMM, 2021, 23 (47) : 8360 - 8366Fu, Bo论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Shenzhen Res Inst, Virtual Univ Pk South Dist, Shenzhen 518057, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaMu, Wenxiang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Shenzhen Res Inst, Virtual Univ Pk South Dist, Shenzhen 518057, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaLi, Yang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaShi, Yujun论文数: 0 引用数: 0 h-index: 0机构: Univ Calgary, Dept Chem, Calgary, AB T2N 1N4, Canada Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaLi, Yanbin论文数: 0 引用数: 0 h-index: 0机构: Jiangsu Normal Univ, Sch Phys & Elect Engn, Jiangsu Key Lab Adv Laser Mat & Devices, Xuzhou 221116, Jiangsu, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaJia, Zhitai论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Jiangsu Xiyi Adv Mat Res Inst Ind Technol, Xuzhou 221400, Jiangsu, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R ChinaTao, Xutang论文数: 0 引用数: 0 h-index: 0机构: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China Shandong Univ, Shenzhen Res Inst, Virtual Univ Pk South Dist, Shenzhen 518057, Peoples R China Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
- [6] Growth and fundamentals of bulk β-Ga2O3 single crystalsJOURNAL OF SEMICONDUCTORS, 2019, 40 (01)Mohamed, H. F.论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, Egypt Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaXia, Changtai论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaSai, Qinglin论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaCui, Huiyuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaPan, Mingyan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R ChinaQi, Hongji论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
- [7] Wet etching in β-Ga2O3 bulk single crystalsCRYSTENGCOMM, 2022, 24 (06) : 1127 - 1144Jin, Zhu论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaLiu, Yingying论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaXia, Ning论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaGuo, Xiangwei论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaHong, Zijian论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Sch Mat Sci & Engn, Lab Dielect Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaZhang, Hui论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R ChinaYang, Deren论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China Zhejiang Univ, Hangzhou Global Sci & Technol Innovat Ctr, Inst Adv Semicond, Hangzhou 310027, Zhejiang, Peoples R China
- [8] Growth and fundamentals of bulk β-Ga2O3 single crystalsJournal of Semiconductors, 2019, (01) : 13 - 21H.F.Mohamed论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Physics Department, Faculty of Science, Sohag University Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesChangtai Xia论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesQinglin Sai论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesHuiyuan Cui论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesMingyan Pan论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesHongji Qi论文数: 0 引用数: 0 h-index: 0机构: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
- [9] Characteristics of Sn-doped β-Ga2O3 single crystals grown by EFG methodJOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY, 2023, 33 (02): : 83 - 90Je, Tae-Wan论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaPark, Su-Bin论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaJang, Hui-Yeon论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaChoi, Su-Min论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaPark, Mi-Seon论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaJang, Yeon-Suk论文数: 0 引用数: 0 h-index: 0机构: Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea论文数: 引用数: h-index:机构:Moon, Yun-Gon论文数: 0 引用数: 0 h-index: 0机构: Axel, Jinju 52818, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaKang, Jin-Ki论文数: 0 引用数: 0 h-index: 0机构: Axel, Jinju 52818, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaShin, Yun-Ji论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Ceram Engn & Technol, Jinju 52851, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South KoreaBae, Si -Yong论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Ceram Engn & Technol, Jinju 52851, South Korea Dong Eui Univ, Dept Adv Mat Engn, Busan 47340, South Korea
- [10] Structural characterization of defects in EFG- and HYPE-grown β-Ga2O3 crystalsJAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (05)Ueda, Osamu论文数: 0 引用数: 0 h-index: 0机构: Meiji Univ, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan Meiji Univ, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan论文数: 引用数: h-index:机构:Yamaguchi, Hirotaka论文数: 0 引用数: 0 h-index: 0机构: Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan Meiji Univ, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan