Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy

被引：0
|
作者：
Adlmaier, T. [1 ]
Doering, S. [1 ]
Binder, B. [1 ]
Simon, D. K. [1 ]
Mikolajick, T. [2 ,4 ]
Eng, L. M. [3 ,5 ]
机构：
[1] Infineon Technol Dresden GmbH, Koenigsbrucker Str 180, D-01099 Dresden, Germany
[2] Univ Technol Dresden, Chair Nanoelect, Noethnitzer Str 64, Dresden, Germany
[3] Univ Technol Dresden, Inst Appl Phys, Noethnitzer Str 61, D-01187 Dresden, Germany
[4] Namlab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany
[5] Univ Technol Dresden, Ct Qmat Dresden Wuerzburg Cluster Excellence EXC 2, D-01062 Dresden, Germany
来源：
MICROELECTRONICS RELIABILITY | 2025年 / 168卷
基金：
欧盟地平线“2020”;
关键词：
SPM; SSRM; SRP; Dopant characterization; Quantification; Sample preparation; Epitaxy; NANOCONTACT; SILICON;
D O I：
10.1016/j.microrel.2025.115646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we introduce an extended sample preparation workflow to enhance the two-dimensional (2D) charge carrier quantification via scanning spreading resistance microscopy (SSRM) for failure analysis and electrical device characterization. This is achieved by means of embedding a novel partial-staircase doping reference sample close to the area of interest prior to cross-sectioning the device. We subsequently demonstrate that this approach enhances the quantification reliability while reducing analysis time.
引用
收藏
页数：7
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