Improved 2D charge carrier quantification workflow for scanning spreading resistance microscopy

被引：0

作者：

Adlmaier, T. ^{[1
]}

Doering, S. ^{[1
]}

Binder, B. ^{[1
]}

Simon, D. K. ^{[1
]}

Mikolajick, T. ^{[2
,4
]}

Eng, L. M. ^{[3
,5
]}

机构：

[1] Infineon Technol Dresden GmbH, Koenigsbrucker Str 180, D-01099 Dresden, Germany

[2] Univ Technol Dresden, Chair Nanoelect, Noethnitzer Str 64, Dresden, Germany

[3] Univ Technol Dresden, Inst Appl Phys, Noethnitzer Str 61, D-01187 Dresden, Germany

[4] Namlab gGmbH, Noethnitzer Str 64, D-01187 Dresden, Germany

[5] Univ Technol Dresden, Ct Qmat Dresden Wuerzburg Cluster Excellence EXC 2, D-01062 Dresden, Germany

来源：

MICROELECTRONICS RELIABILITY | 2025年 / 168卷

基金：

欧盟地平线“2020”;

关键词：

SPM; SSRM; SRP; Dopant characterization; Quantification; Sample preparation; Epitaxy; NANOCONTACT; SILICON;

D O I：

10.1016/j.microrel.2025.115646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we introduce an extended sample preparation workflow to enhance the two-dimensional (2D) charge carrier quantification via scanning spreading resistance microscopy (SSRM) for failure analysis and electrical device characterization. This is achieved by means of embedding a novel partial-staircase doping reference sample close to the area of interest prior to cross-sectioning the device. We subsequently demonstrate that this approach enhances the quantification reliability while reducing analysis time.

引用

页数：7

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