Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

被引：1
|
作者：
Panzo, E. C. [1 ]
Candido, J. [1 ]
Graziano, N., Jr. [1 ]
Simoen, E. [2 ,3 ]
Andrade, M. G. C. [1 ]
机构：
[1] Sao Paulo State Univ, Inst Sci & Technol, Sorocaba, SP, Brazil
[2] Univ Ghent, Ghent, Belgium
[3] Imec Leuven, Leuven, Belgium
来源：
2024 38TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES, SBMICRO 2024 | 2024年
基金：
巴西圣保罗研究基金会;
关键词：
HEMT; Manufacturing process; Gate metal; Series resistance; Ohmic contacts; GaN channel;
D O I：
10.1109/SBMicro64348.2024.10673850
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents the characterization of high mobility transistors (AlGaN/GaN HEMTs) produced with different techniques in the manufacturing process. The study performs a comparative analysis of the respective HEMTs. Here it is demonstrated that efficient HEMTs can be developed using 2 active implants without the need for specific heat treatment processes to create ohmic contacts or activate the device. The devices thus produced had higher drain current (I-d), output conductance (g(d)), transconductance (g(m)), field effect mobility (mu(eff)), effective mobility (mu(FE)) and low field mobility (mu(o)), in addition to lowest series resistance (R-SD), threshold voltage (V-T) and subthreshold slope (S). These results indicate that the adopted methodology not only simplifies the manufacturing process but also significantly improves the performance of HEMTs.
引用
收藏
页数：4
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