Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

This work presents the characterization of high mobility transistors (AlGaN/GaN HEMTs) produced with different techniques in the manufacturing process. The study performs a comparative analysis of the respective HEMTs. Here it is demonstrated that efficient HEMTs can be developed using 2 active implants without the need for specific heat treatment processes to create ohmic contacts or activate the device. The devices thus produced had higher drain current (I-d), output conductance (g(d)), transconductance (g(m)), field effect mobility (mu(eff)), effective mobility (mu(FE)) and low field mobility (mu(o)), in addition to lowest series resistance (R-SD), threshold voltage (V-T) and subthreshold slope (S). These results indicate that the adopted methodology not only simplifies the manufacturing process but also significantly improves the performance of HEMTs.