High Precision Direct Transfer Bonding for Submicron Die-to-wafer in 3D/Heterogeneous Integration

被引：0

作者：

Sano, Ichiro ^{[1
]}

Yamada, Katsuya ^{[1
]}

Hirai, Yuya ^{[1
]}

Yamagishi, Masanori ^{[2
]}

Takyu, Shinya ^{[2
]}

Fumita, Yusuke ^{[2
]}

Kurita, Yoichiro ^{[3
]}

机构：

[1] TAZMO CO LTD, Okayama, Japan

[2] LINTEC Corp, Tokyo, Japan

[3] Tokyo Inst Technol, Yokohama, Kanagawa, Japan

来源：

2024 IEEE 10TH ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, ESTC 2024 | 2024年

关键词：

Die-to-Wafer; Direct Bonding; Hybrid Bonding; Direct Transfer Bonding;

D O I：

10.1109/ESTC60143.2024.10712144

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Direct Transfer Bonding (DTB) is considered a competitive candidate to achieve a Die-to-Wafer Direct/Hybrid Bonding (DB/HB). In this study, we proposed and demonstrated the feasibility of a mechanism for image recognition and alignment over a chip carrier tape to achieve high joint accuracy, which has not been achieved with conventional DTB approach. It was confirmed that <100 nm level alignment can be achieved with this method. The DTB with this method will realize a low-cost and versatile Die-to-Wafer DB/HB.

引用

页数：6

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