High Precision Direct Transfer Bonding for Submicron Die-to-wafer in 3D/Heterogeneous Integration

被引：0
|
作者：
Sano, Ichiro [1 ]
Yamada, Katsuya [1 ]
Hirai, Yuya [1 ]
Yamagishi, Masanori [2 ]
Takyu, Shinya [2 ]
Fumita, Yusuke [2 ]
Kurita, Yoichiro [3 ]
机构：
[1] TAZMO CO LTD, Okayama, Japan
[2] LINTEC Corp, Tokyo, Japan
[3] Tokyo Inst Technol, Yokohama, Kanagawa, Japan
来源：
2024 IEEE 10TH ELECTRONICS SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE, ESTC 2024 | 2024年
关键词：
Die-to-Wafer; Direct Bonding; Hybrid Bonding; Direct Transfer Bonding;
D O I：
10.1109/ESTC60143.2024.10712144
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Direct Transfer Bonding (DTB) is considered a competitive candidate to achieve a Die-to-Wafer Direct/Hybrid Bonding (DB/HB). In this study, we proposed and demonstrated the feasibility of a mechanism for image recognition and alignment over a chip carrier tape to achieve high joint accuracy, which has not been achieved with conventional DTB approach. It was confirmed that <100 nm level alignment can be achieved with this method. The DTB with this method will realize a low-cost and versatile Die-to-Wafer DB/HB.
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页数：6
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