Light-induced quantum anomalous Hall effect in kagome noncollinear antiferromagnets

被引:0
|
作者
Bai, Yingxi [1 ]
Zou, Xiaorong [1 ]
Chen, Zhiqi [1 ]
Li, Runhan [1 ]
Yin, Hang [1 ]
Dai, Ying [1 ]
Huang, Baibiao [1 ]
Niu, Chengwang [1 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
关键词
D O I
10.1103/PhysRevB.111.054407
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We put forward that circularly polarized light is a versatile way to manipulate the quantum anomalous Hall effect (QAHE) in kagome noncollinear antiferromagnets. Employing model analysis and first-principles calculations, we investigate the origin of nontrivial insulator and nonvanishing anomalous Hall conductivity, where a topological phase transition from nontrivial semimetals to Chern insulators emerges accompanied by the breaking of mirror symmetry M and combined symmetry C6zT. In particular, both the organic and inorganic material candidates, i.e., Cr3(HAB)2 and Cr3Te2 monolayers, are proposed to realize the Floquet-engineered QAHE, confirmed via nonzero Chern numbers C = +/- 1 and the emergence of one chiral edge state in the nanoribbons. Moreover, a tight-binding model is constructed to demonstrate the generality and feasibility of attaining Floquet-engineered QAHE in kagome noncollinear antiferromagnets. These findings hold substantial significance for the combination of QAHE, Floquet engineering, and noncollinear antiferromagnets with high possibility of innovative applications in topological spintronics.
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页数:7
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