Research Progress on the Field-Effect Transistors Sensors for CO2 Gas Based on 1-D or 2-D Nanomaterials: A Review

被引:0
|
作者
Gao, Chunping [1 ]
Wang, Zhaoxia [2 ]
Wang, Chao [1 ]
Wang, Tao [2 ]
Wang, Xueliang [2 ]
机构
[1] Shandong Chem Engn & Vocat Coll, Weifang 261108, Peoples R China
[2] Heze Univ, Coll Chem & Chem Engn, Heze 274000, Peoples R China
基金
中国国家自然科学基金;
关键词
1-D nanomaterials; 2-D nanomaterials; CO2; field-effect transistor (FET) sensors; review; MOS2; NANOSHEETS; LABEL-FREE; NANOPARTICLES; PERFORMANCE; GRAPHENE; CAPACITANCE;
D O I
10.1109/JSEN.2024.3519346
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to the excessive emission of CO2 has irreversible consequences on the global ecosystems and environments, the detection of carbon dioxide (CO2) with high efficiency and sensitivity has become imperative in environmental monitoring. The field-effect transistors (FETs), as emerging detection tools, hold significant potential applications in the analysis and detection of CO2 gas. Over the past decade, the research on the FET sensors for CO2 gas based on 1-D and 2-D nanomaterials has made great progress because they have important advantages in terms of sensing performance compared with the bulk, powder, and microstructure counterparts. For comprehensively learning about the status of 1-D and 2-D nanomaterials in CO2 gas FETs sensor, the research progress on the CO2 gas FETs sensor in domestic and abroad was deeply reviewed. The key aspects and technical challenges related to this research, along with the obstacles faced by CO2 gas FET sensors were discussed, and the future trends in FET-based CO2 gas sensors are outlined additionally.
引用
收藏
页码:4046 / 4054
页数:9
相关论文
共 50 条
  • [41] Fin field-effect transistors based on 2D Bi2O2Se—a huge innovation of 2D transistors device structure
    Qundong Fu
    Beng Kang Tay
    Zheng Liu
    Science China Chemistry, 2023, 66 : 2439 - 2440
  • [42] Fin field-effect transistors based on 2D Bi2O2Se——a huge innovation of 2D transistors device structure
    Qundong Fu
    Beng Kang Tay
    Zheng Liu
    Science China(Chemistry), 2023, (09) : 2439 - 2440
  • [43] Ferroelectric field-effect transistors based on HfO2: a review
    Mulaosmanovic, Halid
    Breyer, Evelyn T.
    Dunkel, Stefan
    Beyer, Sven
    Mikolajick, Thomas
    Slesazeck, Stefan
    NANOTECHNOLOGY, 2021, 32 (50)
  • [44] Next Generation Field-Effect Transistors Based on 2D Black Phosphorus Crystal
    Ang, Kah-Wee
    Ling, Zhi-Peng
    Zhu, Juntao
    2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP), 2015, : 1223 - 1226
  • [45] Steep slope threshold switching field-effect transistors based on 2D heterostructure
    Mao, Jingyu
    Jin, Tengyu
    Hou, Xiangyu
    Teo, Siew Lang
    Lin, Ming
    Chen, Jingsheng
    Chen, Wei
    SMARTMAT, 2024, 5 (06):
  • [46] Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors
    Cannavo, Emmanuele
    Marian, Damiano
    Marin, Enrique Gonzalez
    Tredicucci, Alessandro
    Fiori, Gianluca
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 630 - 636
  • [47] Negative capacitance field-effect transistors based on ferroelectric AlScN and 2D MoS2
    Song, Seunguk
    Kim, Kwan-Ho
    Chakravarthi, Srikrishna
    Han, Zirun
    Kim, Gwangwoo
    Ma, Kyung Yeol
    Shin, Hyeon Suk
    Olsson, Roy H.
    Jariwala, Deep
    APPLIED PHYSICS LETTERS, 2023, 123 (18)
  • [48] Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
    Hahn, Herwig
    Reuters, Benjamin
    Geipel, Sascha
    Schauerte, Meike
    Benkhelifa, Fouad
    Ambacher, Oliver
    Kalisch, Holger
    Vescan, Andrei
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (10)
  • [49] Integrated 2D multi-fin field-effect transistors
    Yu, Mengshi
    Tan, Congwei
    Yin, Yuling
    Tang, Junchuan
    Gao, Xiaoyin
    Liu, Hongtao
    Ding, Feng
    Peng, Hailin
    NATURE COMMUNICATIONS, 2024, 15 (01) : 3622
  • [50] Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation
    Tsai, Jung-Hui
    Huang, Chia-Hong
    Ou-Yang, Jhih-Jhong
    Chao, Yi-Ting
    Jhou, Jia-Cing
    Wu, You-Ren
    THIN SOLID FILMS, 2013, 547 : 267 - 271