Research Progress on the Field-Effect Transistors Sensors for CO2 Gas Based on 1-D or 2-D Nanomaterials: A Review

被引:0
|
作者
Gao, Chunping [1 ]
Wang, Zhaoxia [2 ]
Wang, Chao [1 ]
Wang, Tao [2 ]
Wang, Xueliang [2 ]
机构
[1] Shandong Chem Engn & Vocat Coll, Weifang 261108, Peoples R China
[2] Heze Univ, Coll Chem & Chem Engn, Heze 274000, Peoples R China
基金
中国国家自然科学基金;
关键词
1-D nanomaterials; 2-D nanomaterials; CO2; field-effect transistor (FET) sensors; review; MOS2; NANOSHEETS; LABEL-FREE; NANOPARTICLES; PERFORMANCE; GRAPHENE; CAPACITANCE;
D O I
10.1109/JSEN.2024.3519346
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Due to the excessive emission of CO2 has irreversible consequences on the global ecosystems and environments, the detection of carbon dioxide (CO2) with high efficiency and sensitivity has become imperative in environmental monitoring. The field-effect transistors (FETs), as emerging detection tools, hold significant potential applications in the analysis and detection of CO2 gas. Over the past decade, the research on the FET sensors for CO2 gas based on 1-D and 2-D nanomaterials has made great progress because they have important advantages in terms of sensing performance compared with the bulk, powder, and microstructure counterparts. For comprehensively learning about the status of 1-D and 2-D nanomaterials in CO2 gas FETs sensor, the research progress on the CO2 gas FETs sensor in domestic and abroad was deeply reviewed. The key aspects and technical challenges related to this research, along with the obstacles faced by CO2 gas FET sensors were discussed, and the future trends in FET-based CO2 gas sensors are outlined additionally.
引用
收藏
页码:4046 / 4054
页数:9
相关论文
共 50 条
  • [21] Modeling of graphene-based field-effect transistors through a 1-D real-space approach
    Rawat, Brajesh
    Paily, Roy
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (01) : 90 - 100
  • [22] Modeling of graphene-based field-effect transistors through a 1-D real-space approach
    Brajesh Rawat
    Roy Paily
    Journal of Computational Electronics, 2018, 17 : 90 - 100
  • [23] Recent Progress in Gas Sensors Based on P3HT Polymer Field-Effect Transistors
    Cheng, Si
    Wang, Yifan
    Zhang, Ruishi
    Wang, Hongjiao
    Sun, Chenfang
    Wang, Tie
    SENSORS, 2023, 23 (19)
  • [24] A novel 2-D adaptive filter based on the 1-D RLS algorithm
    Muneyasu, M
    Uemoto, E
    Hinamoto, T
    ISCAS '97 - PROCEEDINGS OF 1997 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS I - IV: CIRCUITS AND SYSTEMS IN THE INFORMATION AGE, 1997, : 2317 - 2320
  • [25] Organic Semiconductor Field-Effect Transistors Based on Organic-2D Heterostructures
    Wang, Zi
    Huang, Lizhen
    Chi, Lifeng
    FRONTIERS IN MATERIALS, 2020, 7
  • [26] Electrical characterization of 2D materials-based field-effect transistors
    Mitta, Sekhar Babu
    Choi, Min Sup
    Nipane, Ankur
    Ali, Fida
    Kim, Changsik
    Teherani, James T.
    Hone, James
    Yoo, Won Jong
    2D MATERIALS, 2021, 8 (01)
  • [27] Two-Dimensional MoSi2N4: An Excellent 2-D Semiconductor for Field-Effect Transistors
    Nandan, Keshari
    Ghosh, Barun
    Agarwal, Amit
    Bhowmick, Somnath
    Chauhan, Yogesh S.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (01) : 406 - 413
  • [28] Delta Operator Based Design of 1-D and 2-D Filters: An Overview
    Khoo, I-Hung
    Reddy, Hari C.
    2008 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2008), VOLS 1-4, 2008, : 1442 - 1445
  • [29] Wet etching of TiN in 1-D and 2-D confined nano-spaces of FinFET transistors
    Vereecke, Guy
    De Coster, Hanne
    Van Alphen, Senne
    Carolan, Patrick
    Bender, Hugo
    Willems, Kherim
    Ragnarsson, Lars-Ake
    Van Dorpe, Pol
    Horiguchi, Naoto
    Holsteyns, Frank
    MICROELECTRONIC ENGINEERING, 2018, 200 : 56 - 61
  • [30] 2D layered halide perovskite for field-effect transistors
    Paul, Tufan
    Colella, Silvia
    Orgiu, Emanuele
    APPLIED PHYSICS REVIEWS, 2024, 11 (04):