Optical and Electrical Properties of Sb2(SxSe1-x)3 Films for Solar Cells

被引：0

作者：

Tivanov, M. S. ^{[1
]}

Razykov, T. M. ^{[2
,3
]}

Kuchkarov, K. M. ^{[2
,3
]}

Lyashenko, L. S. ^{[1
]}

Voropay, E. S. ^{[1
]}

Utamurodova, Sh. B. ^{[3
]}

Isakov, D. Z. ^{[2
]}

Makhmudov, M. A. ^{[2
]}

Olimov, A. N. ^{[2
]}

Muzafarova, S. A. ^{[3
]}

Bayko, D. S. ^{[1
]}

机构：

[1] Belarusian State Univ, Minsk, BELARUS

[2] Acad Sci Uzbek, Physicotechn Inst, Tashkent, Uzbekistan

[3] Inst Semicond Phys & Microelect, Tashkent, Uzbekistan

来源：

JOURNAL OF APPLIED SPECTROSCOPY | 2025年 / 91卷 / 06期

关键词：

Sb2Se3; Sb2S3; Sb-2(Se; S)(3); absorption coefficient; band gap width; Urbach energy; and conductivity; THIN-FILM; DEPOSITION;

D O I：

10.1007/s10812-025-01845-w

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The vacuum thermal evaporation method was used to produce Sb-2(SxSe1-x)(3) films from powders of precursor binary compounds, Sb2S3 and Sb2Se3, at substrate temperature 300 degrees C. The effect of the elemental composition ratio S/(S + Se) on the optical and electrical properties of Sb-2(SxSe1-x)(3) films was studied. The band gap width of Sb-2(SxSe1-x) films increases with an increase in the sulfur concentration. The prepared films feature low Urbach energies indicating low-defect structure. The temperature dependence of the resistance indicated the presence of deep-lying levels in the range 0.5-0.8 eV depending of the S/(S+Se) atomic concentration ratio. These results indicate the feasibility of producing effective solar cells containing Sb-2(SxSb(1-x))(3) obtained by means of thermal evaporation of powders of Sb2S3 and Sb2Se3.

引用

页码：1249 / 1255

页数：7

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