Optical and Electrical Properties of Sb2(SxSe1-x)3 Films for Solar Cells

被引:0
|
作者
Tivanov, M. S. [1 ]
Razykov, T. M. [2 ,3 ]
Kuchkarov, K. M. [2 ,3 ]
Lyashenko, L. S. [1 ]
Voropay, E. S. [1 ]
Utamurodova, Sh. B. [3 ]
Isakov, D. Z. [2 ]
Makhmudov, M. A. [2 ]
Olimov, A. N. [2 ]
Muzafarova, S. A. [3 ]
Bayko, D. S. [1 ]
机构
[1] Belarusian State Univ, Minsk, BELARUS
[2] Acad Sci Uzbek, Physicotechn Inst, Tashkent, Uzbekistan
[3] Inst Semicond Phys & Microelect, Tashkent, Uzbekistan
关键词
Sb2Se3; Sb2S3; Sb-2(Se; S)(3); absorption coefficient; band gap width; Urbach energy; and conductivity; THIN-FILM; DEPOSITION;
D O I
10.1007/s10812-025-01845-w
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
The vacuum thermal evaporation method was used to produce Sb-2(SxSe1-x)(3) films from powders of precursor binary compounds, Sb2S3 and Sb2Se3, at substrate temperature 300 degrees C. The effect of the elemental composition ratio S/(S + Se) on the optical and electrical properties of Sb-2(SxSe1-x)(3) films was studied. The band gap width of Sb-2(SxSe1-x) films increases with an increase in the sulfur concentration. The prepared films feature low Urbach energies indicating low-defect structure. The temperature dependence of the resistance indicated the presence of deep-lying levels in the range 0.5-0.8 eV depending of the S/(S+Se) atomic concentration ratio. These results indicate the feasibility of producing effective solar cells containing Sb-2(SxSb(1-x))(3) obtained by means of thermal evaporation of powders of Sb2S3 and Sb2Se3.
引用
收藏
页码:1249 / 1255
页数:7
相关论文
共 50 条
  • [21] Modeling of Ag incorporated Sb2(SxSe1-x)3 bi-layer devices: Enhanced bi-layer absorber configuration
    Lee, Sanghyun
    McInerney, Michael F.
    SOLAR ENERGY, 2022, 238 : 363 - 370
  • [22] Influence of sulphur on the electrical and optical properties of p-type CuIn(SxSe1-x)2 single crystals
    Eisener, B
    Wolf, D
    Müller, G
    THIN SOLID FILMS, 2000, 361 : 126 - 129
  • [23] CUIN(SXSE1-X)(2) THIN-FILMS BY SULFURIZATION
    OHASHI, T
    JAGERWALDAU, A
    MIYAZAWA, T
    HASHIMOTO, Y
    ITO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8A): : 4159 - 4162
  • [24] Technology of mixed amorphous As2(SxSe1-x)3 from chemical solutions and their optical properties
    Verlan, V.
    Buzurniuc, S.
    Malahov, L.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, 2011, 8 (09): : 2717 - 2720
  • [25] PHOTOCONDUCTION IN CD(SXSE1-X) FILMS WITH GRADED COMPOSITION
    BONNET, D
    GERMER, H
    RABENHORST, H
    PHYSICA STATUS SOLIDI, 1968, 29 (01): : K65 - +
  • [26] Phase-matching properties of LiIn(SxSe1-x)2
    Kato, Kiyoshi
    Petrov, Valentin
    Miyata, Kentaro
    NONLINEAR FREQUENCY GENERATION AND CONVERSION: MATERIALS AND DEVICES XIX, 2020, 11264
  • [27] Appearance of ferroelectricity in thin SxSe1-x crystalline films
    Kityk, IV
    FERROELECTRICS, 2002, 265 : 233 - +
  • [28] Preparation of CuIn(SxSe1-x)2 thin films by sulfurization and selenization
    Shinshu Univ, Nagano, Japan
    Sol Energ Mater Sol Cells, 1-4 (37-42):
  • [29] Preparation of CuIn(SxSe1-x)2 thin films by sulfurization and selenization
    Ohashi, T
    Inakoshi, K
    Hashimoto, Y
    Ito, K
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 50 (1-4) : 37 - 42