Optical and Electrical Properties of Sb2(SxSe1-x)3 Films for Solar Cells

被引：0
|
作者：
Tivanov, M. S. [1 ]
Razykov, T. M. [2 ,3 ]
Kuchkarov, K. M. [2 ,3 ]
Lyashenko, L. S. [1 ]
Voropay, E. S. [1 ]
Utamurodova, Sh. B. [3 ]
Isakov, D. Z. [2 ]
Makhmudov, M. A. [2 ]
Olimov, A. N. [2 ]
Muzafarova, S. A. [3 ]
Bayko, D. S. [1 ]
机构：
[1] Belarusian State Univ, Minsk, BELARUS
[2] Acad Sci Uzbek, Physicotechn Inst, Tashkent, Uzbekistan
[3] Inst Semicond Phys & Microelect, Tashkent, Uzbekistan
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2025年 / 91卷 / 06期
关键词：
Sb2Se3; Sb2S3; Sb-2(Se; S)(3); absorption coefficient; band gap width; Urbach energy; and conductivity; THIN-FILM; DEPOSITION;
D O I：
10.1007/s10812-025-01845-w
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The vacuum thermal evaporation method was used to produce Sb-2(SxSe1-x)(3) films from powders of precursor binary compounds, Sb2S3 and Sb2Se3, at substrate temperature 300 degrees C. The effect of the elemental composition ratio S/(S + Se) on the optical and electrical properties of Sb-2(SxSe1-x)(3) films was studied. The band gap width of Sb-2(SxSe1-x) films increases with an increase in the sulfur concentration. The prepared films feature low Urbach energies indicating low-defect structure. The temperature dependence of the resistance indicated the presence of deep-lying levels in the range 0.5-0.8 eV depending of the S/(S+Se) atomic concentration ratio. These results indicate the feasibility of producing effective solar cells containing Sb-2(SxSb(1-x))(3) obtained by means of thermal evaporation of powders of Sb2S3 and Sb2Se3.
引用
收藏
页码：1249 / 1255
页数：7
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