A D-band Bi-directional Current-Reuse Common-Gate Amplifier in 45nm RFSOI

被引：0
|
作者：
Uddin, Syed Mohammad Ashab [1 ]
Zhong, Liwen [1 ]
Lee, Wooram [1 ]
机构：
[1] The Pennsylvania State University, United States
来源：
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium | 2024年
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Low noise amplifiers
引用
收藏
页码：379 / 382
相关论文
共 28 条
  • [21] A 5–7 GHz current reuse and gm-boosted common gate low noise amplifier with LC based ESD protection in 32 nm CMOS
    Sriharsha Ankathi
    Sriramula Vignan
    Srikanth Athukuri
    Smrithi Mohan
    Karthigha Balamurugan
    M. Nirmala Devi
    Analog Integrated Circuits and Signal Processing, 2017, 90 : 573 - 589
  • [22] A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI
    Venturini, Giacomo
    Reynaert, Patrick
    2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, : 187 - 190
  • [23] A 5-7 GHz current reuse and gm-boosted common gate low noise amplifier with LC based ESD protection in 32 nm CMOS
    Ankathi, Sriharsha
    Vignan, Sriramula
    Athukuri, Srikanth
    Mohan, Smrithi
    Balamurugan, Karthigha
    Devi, M. Nirmala
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2017, 90 (03) : 573 - 589
  • [24] A Compact Ka-Band Bi-Directional PA-LNA with 17.4-dBm Psat Using Three-Stack Power Amplifier in 28-nm CMOS
    Hwang, Jun
    Min, Byung-Wook
    2024 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFIC 2024, 2024, : 63 - 66
  • [25] Bi-Directional Flip-Chip 28 GHz Phased-Array Core-Chip in 45nm CMOS SOI for High-Efficiency High-Linearity 5G Systems
    Kodak, Umut
    Rebeiz, Gabriel M.
    2017 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2017, : 61 - 64
  • [26] D-Band SiGe BiCMOS Power Amplifier With 16.8 dBm P1dB and 17.1% PAE Enhanced by Current-Clamping in Multiple Common-Base Stages
    Petricli, Ibrahim
    Riccardi, Domenico
    Mazzanti, Andrea
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (03) : 288 - 291
  • [27] A Broadband 22 nm FDSOI D-Band Power Amplifier with Dynamic Back Gate Bias Gain-Linearization Achieving 9.6% PAE at 8.7 dBm OP1dB and 3.7% at 6 dB Back-off
    Engelmann, Andre
    Scheller, Kai
    Probst, Florian
    Koch, Manuel
    Weigel, Robert
    Fischer, Georg
    2024 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, IMS 2024, 2024, : 1077 - 1080
  • [28] A 22nm FD-SOI CMOS 2-way D-band Power Amplifier Achieving PAE of 7.7% at 9.6dBm OP1dB and 3.1% at 6dB Back-off by Leveraging Adaptive Back-Gate Bias Technique
    Rahimi, Elham
    Bozorgi, Farhad
    Hueber, Gernot
    2022 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2022, : 175 - 178
123