Defects in solid phase and laser crystallized polysilicon thin film transistors

被引：0
|
作者：
THOMSON-CSF Lab Central de Recherche, Orsay, France [1 ]
机构：
来源：
J Non Cryst Solids | / Pt 2卷 / 1207-1212期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Observation of defects in laser-crystallized polysilicon thin films by hydrogenation and raman spectroscopy
    Kitahara, Kuninori
    Nakajima, Kazuo
    Moritani, Akihiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (3 A): : 1209 - 1213
  • [22] Observation of defects in laser-crystallized polysilicon thin films by hydrogenation and Raman spectroscopy
    Kitahara, K
    Nakajima, K
    Moritani, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (3A): : 1209 - 1213
  • [23] Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs)
    Farmakis, FV
    Tsamados, DM
    Brini, J
    Kamarinos, G
    Dimitriadis, CA
    Miyasaka, M
    THIN SOLID FILMS, 2001, 383 (1-2) : 151 - 153
  • [24] Excimer laser crystallized poly-Si thin film transistors
    Gosain, DP
    FLAT PANEL DISPLAY TECHNOLOGY AND DISPLAY METROLOGY II, 2001, 4295 : 24 - 32
  • [25] High uniformity solid phase crystallized bridged-grain polycrystalline silicon thin film transistors
    Center for Display Research, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
    Dig. Tech. Pap. SID Int. Symp., 2013, 1 (1003-1006):
  • [26] Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization
    Pichon, L
    Mourgues, K
    Raoult, F
    Mohammed-Brahim, T
    Kis-Sion, K
    Briand, D
    Bonnaud, O
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (11) : 918 - 924
  • [27] Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors
    Pichon, L
    Mercha, A
    Carin, R
    Bonnaud, O
    Mohammed-Brahim, T
    Helen, Y
    Rogel, R
    APPLIED PHYSICS LETTERS, 2000, 77 (04) : 576 - 578
  • [28] Defects in polycrystalline silicon thin-films crystallized by solid phase and excimer laser annealing
    Kitahara, K
    Ohnishi, K
    Katoh, Y
    Watakabe, K
    Moritani, A
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 161 - 166
  • [29] Two-dimensional numerical simulation of solid-phase-crystallized polysilicon thin-film transistor characteristics
    Chou, TKA
    Kanicki, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2251 - 2255
  • [30] Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon
    Saboundji, A
    Michaud, JF
    Mohammed-Brahim, T
    Le Bihan, F
    Andrä, G
    Bergmann, J
    Falk, F
    POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 55 - 60
12345