Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon

被引：3
|
作者：
Saboundji, A [1 ]
Michaud, JF
Mohammed-Brahim, T
Le Bihan, F
Andrä, G
Bergmann, J
Falk, F
机构：
[1] Univ Rennes 1, UMR CNRS 6164, IETR, GM, F-35042 Rennes, France
[2] Inst Phys Hochtechnol, D-07745 Jena, Germany
来源：
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS | 2003年 / 93卷
关键词：
field effect mobility; laser crystallization; polycrystalline silicon; thin-film transistor;
D O I：
10.4028/www.scientific.net/SSP.93.55
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
N-type polysilicon Thin Film Transistors with high field effect mobility are obtained by using a cw-Nd:YVO4 laser to crystallize the deposited amorphous silicon. This result is due to the large and undetected grains originated from the long laser irradiation time (2 ms) that lowers the cooling rate and also from the scan rate that induces similar phenomenon to the Sequential Lateral Solidification one. The experimental conditions to obtain such result are discussed in this paper.
引用
收藏
页码：55 / 60
页数：6
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