Polymerization of fluorocarbons in reactive ion etching plasmas

被引：0
|
作者：
机构：
来源：
J Vac Sci Technol A | / 1卷 / 87期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Reactive ion etching of GaN with BCl3/SF6 plasmas
    Feng, MS
    Guo, JD
    Lu, YM
    Chang, EY
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 45 (01) : 80 - 83
  • [32] Reactive ion etching of zinc oxide (ZnO) in SiCl4 based plasmas
    Mastropaolo, E.
    Gundlach, A. M.
    Fragkiadakis, C.
    Kirby, P. B.
    Cheung, R.
    ELECTRONICS LETTERS, 2007, 43 (25) : 1467 - 1469
  • [33] REACTIVE ION ETCHING OF POLY(TETRAFLUOROETHYLENE) IN O2-CF4 PLASMAS
    EGITTO, FD
    MATIENZO, LJ
    SCHREYER, HB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (05): : 3060 - 3064
  • [34] Reactive ion etching of GaN in BCl3/N-2 plasmas
    Fedison, JB
    Chow, TP
    Lu, H
    Bhat, IB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (08) : L221 - L224
  • [35] Reactive ion etching and ion beam etching for ferroelectric memories
    Shao, TQ
    Ren, TL
    Liu, LT
    Zhu, J
    Li, ZJ
    INTEGRATED FERROELECTRICS, 2004, 61 : 213 - 220
  • [36] MICROWAVE ETCHING DEVICE FOR REACTIVE ION ETCHING
    SCHMID, H
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1991, 139 : 408 - 411
  • [37] Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching
    Lee, JW
    Park, HS
    Park, YJ
    Yoo, MC
    Kim, TI
    Kim, HS
    Yeom, GY
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 373 - 377
  • [38] REACTIVE ION ETCHING.
    Gorowitz, Bernard
    Saia, Richard J.
    VLSI Electronics, Microstructure Science, 1984, 8 : 297 - 339
  • [39] REACTIVE-ION ETCHING
    OEHRLEIN, GS
    PHYSICS TODAY, 1986, 39 (10) : 26 - 33
  • [40] REACTIVE ION ETCHING OF DIAMOND
    SANDHU, GS
    CHU, WK
    APPLIED PHYSICS LETTERS, 1989, 55 (05) : 437 - 438
12345