Temperature dependence of the intersubband transitions of doped quantum wells

被引：0
|
作者：
机构：
来源：
Physical Review B: Condensed Matter | / 51卷 / 07期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Photoluminescence temperature dependence of doped parabolic quantum wells
    Tabata, A.
    Martins, M. R.
    Oliveira, J. B. B.
    Lamas, T. E.
    Duarte, C. A.
    Quivy, A. A.
    Gusev, G. M.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, 2007, 4 (02): : 369 - +
  • [22] Intersubband optical transitions in InAs/GaSb quantum wells
    Semenikhina I.A.
    Zakharova A.A.
    Chao K.A.
    Russian Microelectronics, 2010, 39 (01) : 63 - 72
  • [23] Spin current injection by intersubband transitions in quantum wells
    Sherman, EY
    Najmaie, A
    Sipe, JE
    APPLIED PHYSICS LETTERS, 2005, 86 (12) : 1 - 3
  • [24] Intersubband transitions in conduction-band quantum wells
    Okhovat-Alavian, S.M.J.
    Afzali-Kusha, A.
    Kamarei, M.
    Amirkabir (Journal of Science and Technology), 2001, 12 (45): : 53 - 62
  • [25] INTERSUBBAND TRANSITIONS IN INAS/ALSB QUANTUM-WELLS
    SIMON, A
    SCRIBA, J
    GAUER, C
    WIXFORTH, A
    KOTTHAUS, JP
    BOLOGNESI, CR
    NGUYEN, C
    TUTTLE, G
    KROEMER, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 201 - 204
  • [26] Lineshape analysis of intersubband transitions in multiple quantum wells
    Gumbs, G
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 265 - 270
  • [27] Intersubband transitions in quantum wells as sources of Thz radiation
    Camacho, AS
    Gutiérrez, RM
    Ardila, G
    MICROELECTRONICS JOURNAL, 2005, 36 (10) : 922 - 927
  • [28] Bound and Continuum Intersubband Transitions in Colloidal Quantum Wells
    Diroll, Benjamin T.
    Coropceanu, Igor
    Portner, Joshua
    Hua, Muchuan
    Schaller, Richard D.
    Talapin, Dmitri V.
    NANO LETTERS, 2025, 25 (06) : 2366 - 2372
  • [29] Intersubband transitions in narrow InAs/AlSb quantum wells
    Larrabee, DC
    Tang, J
    Liang, M
    Khodaparast, GA
    Kono, J
    Ueda, K
    Nakajima, Y
    Suekane, O
    Sasa, S
    Inoue, M
    Kolokolov, KI
    Li, J
    Ning, CZ
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 324 - 333
  • [30] Doping dependence of intersubband transitions in Si1-xGex/Si multiple quantum wells
    Karunasiri, G
    Chua, SJ
    Park, JS
    Wang, KL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3): : 463 - 466
12345