共 50 条
- [41] Optical study of cubic GaN layers grown on (001) GaAs COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 869 - 872
- [42] DIFFUSION-LENGTH MEASUREMENTS IN MELT-GROWN AND LPE-GROWN GAAS-LAYERS SOUTH AFRICAN JOURNAL OF PHYSICS - SUID-AFRIKAANSE TYDSKRIF VIR FISIKA, 1981, 4 (04): : 106 - 112
- [43] Reciprocal lattice mapping of InGaAs layers grown on InP (001) and GaAs (001) substrates EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 1999, 3725 : 47 - 52
- [44] THICKNESS OF GAAS AND GA1-XALXAS-LPE LAYERS GROWN BY LINEAR COOLING SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1978, 7 (04): : 219 - 225
- [46] PHOTOLUMINESCENCE OF InGaP/GaAs (111) LPE LAYERS WITH ELASTIC STRAIN DUE TO LATTICE MISMATCH. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (06): : 893 - 896
- [47] Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy Doklady Physics, 2001, 46 : 88 - 91
- [50] Photoluminescence studies of GaN:: A comparison between layers grown on sapphire and nitridated GaAs layers PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2005, 242 (09): : 1883 - 1886