NARROW PHOTOLUMINESCENCE SPECTRA IN InGaAsP/GaAs (001) LPE LAYERS GROWN IN THE IMMISCIBLE REGION.

被引：0

作者：

Kato, Takamasa ^{[1
]}

Matsumoto, Takashi ^{[1
]}

Ishida, Tetsuro ^{[1
]}

机构：

[1] Yamanashi Univ, Kofu, Jpn, Yamanashi Univ, Kofu, Jpn

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1987年 / 26卷 / 07期

关键词：

BAND-TO-BAND EMISSION - LIQUID PHASE EPITAXY;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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[33] Raman scattering study of InGaAsP quaternary alloys grown on InP in the immiscible region
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[36] Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique
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[37] LPE GROWN GAAS-LAYERS FROM GA-AS-BI SOLUTION
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[38] PHOTOLUMINESCENCE OF INGAP/GAAS (111) LPE LAYERS WITH ELASTIC STRAIN DUE TO LATTICE MISMATCH
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