Time-dependent second-harmonic generation from the Si-SiO2 interface induced by charge transfer

被引：0
|
作者：
机构：
来源：
Optics Letters | 1995年 / 20卷 / 20期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Charge losses in segmented silicon sensors at the Si-SiO2 interface
    Poehlsen, Thomas
    Fretwurst, Eckhart
    Klanner, Robert
    Schuwalow, Sergej
    Schwandt, Joern
    Zhang, Jiaguo
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2013, 700 : 22 - 39
  • [42] ESR CENTERS AND CHARGE DEFECTS NEAR SI-SIO2 INTERFACE
    POINDEXTER, EH
    AHLSTROM, ER
    CAPLAN, PJ
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 456 - 456
  • [43] CALCULATION OF SURFACE-CHARGE NOISE AT THE SI-SIO2 INTERFACE
    GHIBAUDO, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 104 (02): : 917 - 930
  • [44] CHARGE-PUMPING STUDY OF RADIATION-INDUCED DEFECTS AT SI-SIO2 INTERFACE
    AUTRAN, JL
    BALLAND, B
    VALLARD, JP
    BABOT, D
    JOURNAL DE PHYSIQUE III, 1994, 4 (09): : 1707 - 1721
  • [45] Oscillatoric bias dependence of DC-electric field induced second harmonic generation from Si-SiO2 multiple quantum wells
    Savkin, VV
    Fedyanin, AA
    Pudonin, FA
    Rubtsov, AN
    Aktsipetrov, OA
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 350 - 353
  • [46] MODEL FOR THE GENERATION OF POSITIVE CHARGE AT THE SI-SIO2 INTERFACE BASED ON HOT-HOLE INJECTION FROM THE ANODE
    FISCHETTI, MV
    PHYSICAL REVIEW B, 1985, 31 (04) : 2099 - 2113
  • [47] HYDROGEN INDUCED SURFACE STATES AT SI-SIO2 INTERFACE
    ZAININGER, KH
    WARFIELD, G
    PROCEEDINGS OF THE IEEE, 1964, 52 (08) : 972 - &
  • [48] RADIATION-INDUCED DEFECTS ON SI-SIO2 INTERFACE
    PETR, I
    JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 1985, 95 (04) : 257 - 262
  • [49] CALCULATION OF SURFACE GENERATION AND RECOMBINATION VELOCITIES AT THE SI-SIO2 INTERFACE
    EADES, WD
    SWANSON, RM
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4267 - 4276
  • [50] Defect generation at the Si-SiO2 interface following corona charging
    Jin, Hao
    Weber, K. J.
    Dang, N. C.
    Jellett, W. E.
    APPLIED PHYSICS LETTERS, 2007, 90 (26)
12345