MBE regrowth of GaAs/AlGaAs structures on RIE patterned substrates

被引：0
|
作者：
Rohr, T. [1 ]
Walther, M. [1 ]
Rochus, S. [1 ]
Bohm, G. [1 ]
Klein, W. [1 ]
Trankle, G. [1 ]
Weimann, G. [1 ]
机构：
[1] Technische Universitat Munchen, Garching, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B21卷 / 2-3期
关键词：
Aluminum gallium arsenide - Dry etching - Etched surfaces - Patterned surfaces;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：153 / 156
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