On the determination of the interface density of states in a-Si:H/ a-Si1-xCx:H multilayers

被引：0
|
作者：
Bertomeu, J. [1 ]
Puidgollers, J. [1 ]
Asensi, J.M. [1 ]
Andreu, J. [1 ]
机构：
[1] Univ de Barcelona, Barcelona, Spain
来源：
Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期
关键词：
Amorphous materials - Characterization - Interfaces (materials) - Silicon - Silicon carbide - Solid state physics - Spectroscopic analysis;
D O I：
10.1016/0022-3093(93)91133-N
中图分类号：
学科分类号：
摘要：
This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of a-Si:H/ a-Si1-xCx:H multilayers, and a new approach in the treatment of experimental data is used in order to obtain accurate results. From this approach, an upper limit of 1010 cm-2 is determined for the interface density of states.
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页码：861 / 864
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