共 50 条
- [1] DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY AN INDUCTIVELY COUPLED GLOW-DISCHARGE REACTOR WITH SHIELD ELECTRODESJOURNAL OF APPLIED PHYSICS, 1992, 72 (03) : 1188 - 1190YOKOTA, KTAKADA, MOHNO, YKATAYAMA, S
- [2] PLASMA SPECTROSCOPY GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICONTHIN SOLID FILMS, 1982, 92 (1-2) : 171 - 187MATSUDA, ATANAKA, K
- [4] GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY AN INDUCTIVE COUPLING GLOW-DISCHARGE REACTORJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (06): : 965 - 966YOKOTA, KNAKAYAMA, SOHNO, YKATAYAMA, S
- [5] MECHANISMS INVOLVED IN THE GLOW-DISCHARGE DEPOSITION OF DOPED HYDROGENATED AMORPHOUS-SILICONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) : 25 - 29KAMPAS, FJVANIER, PE
- [6] BIAS EFFECTS ON THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILM IN A GLOW-DISCHARGEAPPLIED PHYSICS LETTERS, 1984, 44 (04) : 413 - 415ANDO, KAOZASA, MPYON, RG
- [7] HYDROGENATED AMORPHOUS-SILICON FILMS BY 60 HZ GLOW-DISCHARGE DEPOSITIONJOURNAL OF APPLIED PHYSICS, 1993, 74 (01) : 668 - 671FRAGALLI, JFMISOGUTI, LNAKAGAITO, ANGRIVICKAS, VBAGNATO, VSBRANZ, HM
- [8] THE EFFICIENCY OF GAS USAGE IN GLOW-DISCHARGE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICONSOLAR ENERGY MATERIALS, 1984, 9 (04): : 459 - 470SMITH, GJMILNE, WI
- [9] INFLUENCE OF DEPOSITION CONDITIONS ON PROPERTIES OF HYDROGENATED AMORPHOUS SILICON PREPARED BY RF GLOW DISCHARGE.1600, (24):Nishikawa, SatoshiKakinuma, HiroakiWatanabe, TsukasaNihei, Koji
- [10] THE GROWTH OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICONJOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1383 - 1386BHAT, PKCHATHAM, HSHING, YHPERRY, JW