Pressure dependence of photoluminescence in ordered Ga0.5In0.5P grown on (001) GaAs by organometallic vapor phase epitaxy

被引：0
|
作者：
Kobayashi, Toshihiko [1 ]
Ohtsuji, Michiya [1 ]
Deol, Rajpal S. [1 ]
机构：
[1] Kobe Univ, Kobe, Japan
来源：
Journal of Applied Physics | 1993年 / 74卷 / 04期
关键词：
Photoluminescence;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：2752 / 2759
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