Photoreflectance studies of Ga0.5In0.5P/GaAs heterostructures grown by metalorganic chemical vapor deposition technique

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[1] Hwang, Jenn-Shyong
[2] Hang, Zhijiang
[3] Tyan, Shin-Long
[4] Ding, Sheng-Wei
[5] Tung, Jen-Hsiung
[6] Chen, Chin-Yuan
[7] Lee, Biing-Jye
[8] Hsu, Jung-Tsung
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Hwang, Jenn-Shyong | 1600年 / 31期
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Organometallics - Semiconducting Gallium Arsenide - Semiconductor Devices--Heterojunctions;
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摘要：
Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo + Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.
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