Photoreflectance studies of Ga0.5In0.5P/GaAs heterostructures grown by metalorganic chemical vapor deposition technique

被引：0

作者：

机构：

[1] Hwang, Jenn-Shyong

[2] Hang, Zhijiang

[3] Tyan, Shin-Long

[4] Ding, Sheng-Wei

[5] Tung, Jen-Hsiung

[6] Chen, Chin-Yuan

[7] Lee, Biing-Jye

[8] Hsu, Jung-Tsung

来源：

Hwang, Jenn-Shyong | 1600年 / 31期

关键词：

Organometallics - Semiconducting Gallium Arsenide - Semiconductor Devices--Heterojunctions;

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摘要：

Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo + Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.

引用

共 50 条

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