Photoreflectance studies of Ga0.5In0.5P/GaAs heterostructures grown by metalorganic chemical vapor deposition technique

Photoreflectance was used to study lattice-matched Ga0.5In0.5P/GaAs heterostructures grown using metalorganic chemical vapor deposition. The built-in electric field in the GaAs region at the Ga0.5In0.5P/GaAs interface was evaluated using the observed Franz-Keldysh oscillations. The fundamental energy gaps, Eo and Eo + Δo, of Ga0.5In0.5P were also determined. In addition, we found that as the doping concentration of the Ga0.5In0.5P increased, the broadening parameters of the band gap also increased.