Thin-film transistors with polycrystalline silicon prepared by a new annealing method

被引：0

作者：

Nam, Kee-Soo ^{[1
]}

Song, Yoon-Ho ^{[1
]}

Baek, Jong-Tae ^{[1
]}

Kong, Hong-Jin ^{[1
]}

Lee, Sang-Soo ^{[1
]}

机构：

[1] Electronic and Telecommunications, Research Inst, Daejeon, Korea, Republic of

来源：

| 1908年 / 32期

关键词：

Transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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[21] Effect of excimer laser annealing on the structural and electrical properties of polycrystalline silicon thin-film transistors
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[22] Polycrystalline silicon thin-film transistors: A continuous evolving technology
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[23] Dopant and defect interactions in polycrystalline silicon thin-film transistors
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[24] HOT CARRIERS EFFECTS IN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
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[30] Modeling of kink effect in polycrystalline silicon thin-film transistors
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