Thin-film transistors with polycrystalline silicon prepared by a new annealing method

被引：0
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作者：
Nam, Kee-Soo [1 ]
Song, Yoon-Ho [1 ]
Baek, Jong-Tae [1 ]
Kong, Hong-Jin [1 ]
Lee, Sang-Soo [1 ]
机构：
[1] Electronic and Telecommunications, Research Inst, Daejeon, Korea, Republic of
来源：
| 1908年 / 32期
关键词：
Transistors;
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