Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system

被引：0
|
作者：
机构：
[1] Cho, K.S.
[2] Huang, Tsai-Yu
[3] Huang, Chao-Ping
[4] Chiu, Yi-Hsing
[5] Liang, C.-T.
[6] Chen, Y.F.
[7] Lo, Ikai
来源：
Cho, K.S. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词：
Number:; -; Acronym:; NSC; Sponsor: National Science Council;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN
    Salah Saadaoui
    Olfa Fathallah
    Hassen Maaref
    Brazilian Journal of Physics, 2023, 53
  • [32] Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN
    Saadaoui, Salah
    Fathallah, Olfa
    Maaref, Hassen
    BRAZILIAN JOURNAL OF PHYSICS, 2023, 53 (01)
  • [33] Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
    段宝兴
    杨银堂
    Chinese Physics B, 2012, (05) : 565 - 572
  • [34] Drain current versus drain voltage characteristics for an analytical Al0.25Ga0.75N/GaN superlattice MOSFET
    Mazumdar, Kaushik
    Pathak, Gyanesh Kumar
    Ghosal, Aniruddha
    SUPERLATTICES AND MICROSTRUCTURES, 2016, 97 : 448 - 451
  • [35] Leakage current, capacitance hysteresis and deep traps in Al0.25Ga0.75N/GaN/SiC high-electron-mobility transistors
    Saadaoui, Salah
    Ben Salem, Mohamed Mongi
    Fathallah, Olfa
    Gassoumi, Malek
    Gaquiere, Christophe
    Maaref, Hassen
    PHYSICA B-CONDENSED MATTER, 2013, 412 : 126 - 129
  • [36] Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
    Duan Bao-Xing
    Yang Yin-Tang
    CHINESE PHYSICS B, 2012, 21 (05)
  • [37] Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers
    Huang, Sen
    Shen, Bo
    Xu, Fu-Jun
    Lin, Fang
    Miao, Zhen-Lin
    Song, Jie
    Lu, Lin
    Cen, Long-Bin
    Sang, Li-Wen
    Qin, Zhi-Xin
    Yang, Zhi-Jian
    Zhang, Guo-Yi
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (05)
  • [38] Electron transport properties in Al0.25Ga0.75N/AlN/GaN heterostructures with different InGaN back barrier layers and GaN channel thicknesses grown by MOCVD
    Kelekci, Ozgur
    Tasli, Pinar T.
    Yu, HongBo
    Kasap, Mehmet
    Ozcelik, Suleyman
    Ozbay, Ekmel
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03): : 434 - 438
  • [39] Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures
    Lisesivdin, S. B.
    Acar, S.
    Kasap, M.
    Ozcelik, S.
    Gokden, S.
    Ozbay, E.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (05) : 543 - 548
  • [40] Giant enhanced g-factors in an InSb two-dimensional gas
    Nedniyom, B.
    Nicholas, R. J.
    Emeny, M. T.
    Buckle, L.
    Gilbertson, A. M.
    Buckle, P. D.
    Ashley, T.
    PHYSICAL REVIEW B, 2009, 80 (12)
12345