Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system

被引:0
|
作者
机构
[1] Cho, K.S.
[2] Huang, Tsai-Yu
[3] Huang, Chao-Ping
[4] Chiu, Yi-Hsing
[5] Liang, C.-T.
[6] Chen, Y.F.
[7] Lo, Ikai
来源
Cho, K.S. | 1600年 / American Institute of Physics Inc.卷 / 96期
关键词
Number:; -; Acronym:; NSC; Sponsor: National Science Council;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells
    Capotondi, F
    Biasiol, G
    Vobornik, I
    Sorba, L
    Giazotto, F
    Cavallini, A
    Fraboni, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 702 - 706
  • [22] Strain calculations from hall measurements in undoped Al0.25Ga0.75N/GaN HEMT structures
    Lisesivdin, S. B.
    Yildiz, A.
    Kasap, M.
    Oezbay, E.
    SIX INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION, 2007, 899 : 623 - 623
  • [23] Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
    Walid Amir
    Ju‑Won Shin
    Ki‑Yong Shin
    Jae‑Moo Kim
    Chu‑Young Cho
    Kyung‑Ho Park
    Takuya Hoshi
    Takuya Tsutsumi
    Hiroki Sugiyama
    Hideaki Matsuzaki
    Tae‑Woo Kim
    Scientific Reports, 11
  • [24] High temperature and trap sates characterization of Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction
    Zhao, Shenglei
    Mei, Bo
    Sun, Yi
    Cao, Shuang
    Zhang, Yachao
    Zhu, Dan
    Zhang, Jincheng
    Hao, Yue
    RESULTS IN PHYSICS, 2022, 36
  • [25] Normally-off Al0.25Ga0.75N/GaN MOSHEMT with Stack Gate Dielectric Structure
    Swain, R.
    Lenka, T. R.
    PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 567 - 570
  • [26] Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation
    Duan Bao-Xing
    Yang Yin-Tang
    Chen, Kevin J.
    ACTA PHYSICA SINICA, 2012, 61 (22)
  • [27] Growth parameter investigation of Al0.25Ga0.75N/GaN/AlN heterostructures with Hall effect measurements
    Lisesivdin, S. B.
    Demirezen, S.
    Caliskan, M. D.
    Yildiz, A.
    Kasap, M.
    Ozcelik, S.
    Ozbay, E.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (09)
  • [28] Electrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode
    Saadaoui, Salah
    Ben Salem, Mohamed Mongi
    Gassoumi, Malek
    Maaref, Hassen
    Gaquiere, Christophe
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [29] Breakdown voltage analysis for the new Al0.25Ga0.75N/GaN HEMTs with the step AlGaN layers
    Duan Bao-Xing
    Yang Yin-Tang
    ACTA PHYSICA SINICA, 2014, 63 (05) : 057302
  • [30] Large spontaneous spin-splitting and enhanced effective g-factor in two-dimensional electron gases at In0.75Ga0.25As/In0.75Al0.25As metamorphic heterojunctions
    Kita, T
    Sato, Y
    Gozu, S
    Yamada, S
    PHYSICA B, 2001, 298 (1-4): : 65 - 69