Homoepitaxial chemical vapor deposition of 6H-SiC at low temperatures on {011¯4} substrates

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作者：
Yamashita, Atsushi [1 ]
Yoo, Woo Sik [1 ]
Kimoto, Tsunenobu [1 ]
Matsunami, Hiroyuki [1 ]
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[1] Kyoto Univ, Kyoto, Japan
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| 1600年 / 31期
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