Homoepitaxial chemical vapor deposition of 6H-SiC at low temperatures on {011¯4} substrates

被引：0
|
作者：
Yamashita, Atsushi [1 ]
Yoo, Woo Sik [1 ]
Kimoto, Tsunenobu [1 ]
Matsunami, Hiroyuki [1 ]
机构：
[1] Kyoto Univ, Kyoto, Japan
来源：
| 1600年 / 31期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition
    Okamoto, M
    Kosugi, R
    Nakashima, S
    Kazuo, K
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 259 - 263
  • [22] NUCLEATION AND STEP MOTION IN CHEMICAL-VAPOR-DEPOSITION OF SIC ON 6H-SIC(0001) FACES
    KIMOTO, T
    MATSUNAMI, H
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7322 - 7327
  • [23] Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor
    Jeong, JK
    Na, HJ
    Choi, J
    Hwang, CS
    Kim, HJ
    Bahng, W
    JOURNAL OF CRYSTAL GROWTH, 2000, 210 (04) : 629 - 636
  • [24] Diamond nucleation on singlecrystalline 6H-SiC substrates by bias-enhanced nucleation in hot filament chemical vapor deposition
    Li, X
    Shirafuji, T
    Hayashi, Y
    Lilov, S
    Nishino, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6295 - 6299
  • [25] Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates
    Mynbaeva, M
    Saddow, SE
    Melnychuk, G
    Nikitina, I
    Scheglov, M
    Sitnikova, A
    Kuznetsov, N
    Mynbaev, K
    Dmitriev, V
    APPLIED PHYSICS LETTERS, 2001, 78 (01) : 117 - 119
  • [26] SiC nanowires grown on 4H-SiC substrates by chemical vapor deposition.
    Krishnan, Bharat
    Kotamraju, Siva
    Sundaresan, Siddarth
    Koshka, Yaroslav
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 187 - +
  • [27] Homoepitaxial 6H-SiC thin films by vapor-liquid-solid mechanism
    Chen, Y. F.
    Liu, X. Z.
    Deng, X. W.
    Li, Y. R.
    THIN SOLID FILMS, 2011, 519 (16) : 5358 - 5363
  • [28] Diamond nucleation on singlecrystalline 6H-SiC substrates by bias-enhanced nucleation in hot filament chemical vapor deposition
    Kyoto Inst of Technology, Kyoto, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 10 (6295-6299):
  • [29] Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
    Pons, M
    Mezière, J
    Dedulle, JM
    Kuan, SWT
    Blanquet, E
    Bernard, C
    Ferret, P
    Di Cioccio, L
    Billon, T
    Madar, R
    JOURNAL DE PHYSIQUE IV, 2001, 11 (PR3): : 1079 - 1086
  • [30] Simulation of the large-area growth of homoepitaxial 4H-SiC by chemical vapor deposition
    Pons, M
    Mezière, J
    Kuan, SWT
    Blanquet, E
    Ferret, P
    Di Cioccio, L
    Billon, T
    Madar, R
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 223 - 226
12345