Aspects of defects in silica related to dielectric breakdown of gate oxides in MOSFETs

被引：0
|
作者：
Blöchl, Peter E. [1 ]
Stathis, James H. [2 ]
机构：
[1] IBM Research, Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland
[2] IBM Research, Thomas J. Watson Research Center, Yorktown Heights, NY 10596, United States
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：1022 / 1026
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