DEGRADATION AND BREAKDOWN OF GATE OXIDES IN VLSI DEVICES

被引：36
|
作者：
SUNE, J
PLACENCIA, I
BARNIOL, N
FARRES, E
AYMERICH, X
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期
关键词：
D O I：
10.1002/pssa.2211110235
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：675 / 685
页数：11
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