Performance of high-voltage TIL GATTs

被引：0
|
作者：
Silard, A. [1 ]
Turtudau, Fl. [1 ]
Dumitrescu, G. [1 ]
Stefan, C. [1 ]
Floru, F. [1 ]
机构：
[1] Polytechnic Inst, Romania
来源：
Revue roumaine de sciences techniques. Serie electrotechnique et energetique | 1988年 / 33卷 / 03期
关键词：
Electric Switches; Semiconductor--Performance - Semiconductor Devices;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The work reports the development of high-voltage (>3000 V), high-current (>1000 A) double-interdigitated (TIL) gate-assisted turn-off thyristors (GATTs). The main design and technological issues which enabled the fabrication of ca 3.6 cm2-area, high-power TIL GATTs with excellent overall electrical performance are outlined in detail. The results of this work show that the goal of fabrication of low-cost, ultra-high-power, gate-signal sensitive GATTs for high-frequency operation is already within reach.
引用
收藏
页码：297 / 301
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