Performance of high-voltage TIL GATTs

被引：0

作者：

Silard, A. ^{[1
]}

Turtudau, Fl. ^{[1
]}

Dumitrescu, G. ^{[1
]}

Stefan, C. ^{[1
]}

Floru, F. ^{[1
]}

机构：

[1] Polytechnic Inst, Romania

来源：

Revue roumaine de sciences techniques. Serie electrotechnique et energetique | 1988年 / 33卷 / 03期

关键词：

Electric Switches; Semiconductor--Performance - Semiconductor Devices;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

The work reports the development of high-voltage (>3000 V), high-current (>1000 A) double-interdigitated (TIL) gate-assisted turn-off thyristors (GATTs). The main design and technological issues which enabled the fabrication of ca 3.6 cm2-area, high-power TIL GATTs with excellent overall electrical performance are outlined in detail. The results of this work show that the goal of fabrication of low-cost, ultra-high-power, gate-signal sensitive GATTs for high-frequency operation is already within reach.

引用

页码：297 / 301

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